Study of E3 trap annealing in GaAs by DDLTS technique
- 1 October 1982
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 44 (1) , 41-45
- https://doi.org/10.1016/0038-1098(82)90709-8
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Interpretation of profiles obtained by C(V) technique in presence of deep traps: Application to proton irradiated GaAs samplesSolid-State Electronics, 1982
- Anisotropic-Defect Introduction in GaAs by Electron IrradiationPhysical Review Letters, 1981
- An annealing study of electron irradiation-induced defects in GaAsJournal of Applied Physics, 1980
- Caractérisation des défauts produits dans GaAs irradié aux protons par analyse des transitoires thermiques et optiques de capacitéRevue de Physique Appliquée, 1980
- Selenium implanation into silicon studied by DLTS techniqueApplied Physics Letters, 1977
- Identification of the defect state associated with a gallium vacancy in GaAs andPhysical Review B, 1977
- Double correlation technique (DDLTS) for the analysis of deep level profiles in semiconductorsApplied Physics A, 1977
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Recovery of low temperature electron irradiation-induced damage inn-type gaasRadiation Effects, 1970