Effects of Tisix/Tinx/Al Contact Metallization Process on the Shallow Junction Related Properties
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Boron, phosphorus, and arsenic diffusion in TiSi2Journal of Applied Physics, 1986
- Dopant redistribution during titanium silicide formationJournal of Applied Physics, 1986
- Correlation Between Ti-Silicided Shallow Junction Diode Leakage and Titaniun Diffusion during TISI2 FornationMRS Proceedings, 1986
- Ion-implanted, electron-beam annealed TiN films as diffusion barriers for Al on Si shallow junctionsJournal of Vacuum Science & Technology A, 1985
- Impurity effects in transition metal silicidesJournal of Vacuum Science & Technology B, 1984
- Elastic stiffness and thermal expansion coefficients of various refractory silicides and silicon nitride filmsThin Solid Films, 1980
- Solid state reactions in titanium thin films on siliconThin Solid Films, 1976