Patterning of GaN in High-Density Cl2- and BCl3-Based Plasmas
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 42 references indexed in Scilit:
- Electron cyclotron resonance etching characteristics of GaN in SiCl4/ArApplied Physics Letters, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- High rate electron cyclotron resonance etching of GaN, InN, and AlNJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well StructuresJapanese Journal of Applied Physics, 1995
- High etch rates of GaN with magnetron reactive ion etching in BCl3 plasmasApplied Physics Letters, 1995
- High temperature electron cyclotron resonance etching of GaN, InN, and AlNApplied Physics Letters, 1995
- Dry patterning of InGaN and InAlNApplied Physics Letters, 1994
- Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InNApplied Physics Letters, 1994
- Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1991
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989