Layer-by-layer growth of GaN induced by silicon
- 5 September 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (11) , 1626-1628
- https://doi.org/10.1063/1.1309023
Abstract
We present in situ x-ray scattering studies of surface morphology evolution during metal–organic chemical vapor deposition of GaN. Dosing the GaN(0001) surface with Si is shown to change the growth mode from step-flow to layer-by-layer over a wide temperature range. Annealing of highly doped layers causes Si to segregate to the surface, which also induces layer-by-layer growth.Keywords
This publication has 15 references indexed in Scilit:
- Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor depositionJournal of Applied Physics, 2000
- Transition between the 1×1 and surface structures of GaN in the vapor-phase environmentPhysica B: Condensed Matter, 2000
- SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xNJournal of Electronic Materials, 2000
- Observation of growth modes during metal-organic chemical vapor deposition of GaNApplied Physics Letters, 1999
- Impurity incorporation and the surface morphology of MOVPE grown GaAsJournal of Electronic Materials, 1999
- Real-Time X-Ray Scattering Studies of Surface Structure During Metalorganic Chemical Vapor Deposition of GaNMRS Bulletin, 1999
- Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wellsJournal of Crystal Growth, 1998
- Self-assembling GaN quantum dots on AlxGa1−xN surfaces using a surfactantApplied Physics Letters, 1996
- Time-resolved x-ray scattering studies of layer-by-layer epitaxial growthPhysical Review Letters, 1992
- Surface structure determination by X-ray diffractionSurface Science Reports, 1989