SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN
- 1 January 2000
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 29 (1) , 15-20
- https://doi.org/10.1007/s11664-000-0087-3
Abstract
No abstract availableKeywords
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