Inductively-Coupled-Plasma-Assisted Planar Magnetron Discharge for Enhanced Ionization of Sputtered Atoms
- 1 July 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (7S)
- https://doi.org/10.1143/jjap.36.4568
Abstract
The effects of combining an RF inductively coupled plasma (ICP) with a conventional planar magnetron sputtering discharge have been investigated. The planar magnetron discharge is assisted by the ICP, which is sustained by a helical RF coil immersed in the plasma. Use of the technique significantly enhances the plasma density and the sputtering discharge current. Optical emission measurements of Al ions and neutral lines indicate marked enhancement of ionization of the sputtered atoms after they pass through the dense ICP region.Keywords
This publication has 11 references indexed in Scilit:
- Characterization of helicon wave plasma designed for direct current sputteringJournal of Vacuum Science & Technology A, 1996
- Magnetron sputter deposition with high levels of metal ionizationApplied Physics Letters, 1993
- Low-gas-pressure sputtering by means of microwave-enhanced magnetron plasma excited by electron cyclotron resonanceApplied Physics Letters, 1992
- Review of inductively coupled plasmas for plasma processingPlasma Sources Science and Technology, 1992
- Unbalanced magnetrons and new sputtering systems with enhanced plasma ionizationJournal of Vacuum Science & Technology A, 1991
- Sputtering systems with magnetically enhanced ionization for ion plating of TiN filmsJournal of Vacuum Science & Technology A, 1990
- Use of ion beam assisted deposition to modify the microstructure and properties of thin filmsInternational Materials Reviews, 1990
- Charged particle fluxes from planar magnetron sputtering sourcesJournal of Vacuum Science & Technology A, 1986
- Revised structure zone model for thin film physical structureJournal of Vacuum Science & Technology A, 1984
- High Rate Thick Film GrowthAnnual Review of Materials Science, 1977