Fabrication technologies of InP-based digital ICs and MMICs
- 23 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- A 16-dB DC-to-50-GHz InAlAs/InGaAs HEMT distributed baseband amplifier using a new loss compensation techniquePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Device technologies for InP-based HEMTs and their application to ICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- 0–90 GHz InAlAs/InGaAs/InP HEMT distributedbaseband amplifier ICElectronics Letters, 1995
- W-band high efficiency InP-based power HEMT with 600 GHz f/sub max/IEEE Microwave and Guided Wave Letters, 1995
- A design technique for a 60 GHz-bandwidth distributed baseband amplifier IC moduleIEEE Journal of Solid-State Circuits, 1994
- 0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel EffectsJapanese Journal of Applied Physics, 1994
- 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistorsIEEE Transactions on Electron Devices, 1992
- Elimination of mesa-sidewall gate leakage in InAlAs/InGaAs heterostructures by selective sidewall recessingIEEE Electron Device Letters, 1992
- Uniplanar MMICs and their applicationsIEEE Transactions on Microwave Theory and Techniques, 1988
- Analysis of High-Speed GaAs Source-Coupled FET Logic CircuitsIEEE Transactions on Microwave Theory and Techniques, 1984