Wavelength shift of selectively oxidized Al/sub x/O/sub y/-AlGaAs-GaAs distributed Bragg reflectors
- 1 July 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 9 (7) , 884-886
- https://doi.org/10.1109/68.593333
Abstract
The effect of multiple oxidations on Al/sub x/O/sub y/-GaAs DBRs and Al/sub x/O/sub y/-AlGaAs-GaAs DBRs is investigated. With a compositionally graded AlGaAs layer, the oxide DBR remains stable under thermal stress, whereas without it, the DBR fractures. The stopband of the oxide DBR with the AlGaAs layer shifts when sequenced through multiple oxidation processes, which is attributed to the vertical oxidation of the AlGaAs. The resonance wavelength of a Fabry-Perot cavity containing an oxide DBR shifts 6 nm after 30 min of additional oxidation at 425/spl deg/C.Keywords
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