Effects of finger width on large-area InGaAs MSMphotodetectors

18 January 1996

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 32 (2) , 131-132
https://doi.org/10.1049/el:19960085

Abstract

The authors show that the capacitance of the metal-semiconductor-metal photodetector call be minimised by using a very small or large finger width, with emphasis on the application for the large-area detector. Taking the quantum efficiency into account, the optimum sensitivity of the detector is obtained for the MSM-PD with very slim fingers.

Keywords

This publication has 6 references indexed in Scilit:

High-performance large-area InGaAs MSM photodetectors with a pseudomorphic InGaP cap layer
IEEE Photonics Technology Letters, 1995
Optimization of high-speed metal-semiconductor-metal photodetectors
IEEE Photonics Technology Letters, 1994
High-performance large-area InGaAs metal-semiconductor-metal photodetectors
IEEE Photonics Technology Letters, 1993
High-performance back-illuminated InGaAs/InAlAs MSM photodetector with a record responsivity of 0.96 A/W
IEEE Photonics Technology Letters, 1992
InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications
IEEE Journal of Quantum Electronics, 1991
Low dark current GaAs metal-semiconductor-metal (MSM) photodiodes using WSixcontacts
IEEE Journal of Quantum Electronics, 1986