Electron concentration and mobility loss in GaAs/GaAlAs heterostructures caused by reactive ion etching
- 9 July 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (2) , 177-179
- https://doi.org/10.1063/1.103976
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- An analytical study of etch and etch-stop reactions for GaAs on AlGaAs in CCl2F2 plasmaJournal of Applied Physics, 1987
- Electron mobility limits in a two-dimensional electron gas: GaAs-GaAlAs heterostructuresPhysical Review B, 1984
- Selective Dry Etching of AlGaAs-GaAs HeterojunctionJapanese Journal of Applied Physics, 1981