Electron mobility limits in a two-dimensional electron gas: GaAs-GaAlAs heterostructures
- 15 April 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 29 (8) , 4818-4820
- https://doi.org/10.1103/physrevb.29.4818
Abstract
A theoretical model was formulated for electron scattering in a two-dimensional electron gas confined in a triangular potential well. For the first time, the effects of intersubband scattering were included. An inherent mobility limit is imposed by phonon, alloy, and remote impurity scattering. Intersubband scattering was found to play a significant role in determining this mobility limit. The model accounted very satisfactorily for the reported electron mobility characteristics in GaAs-GaAlAs heterostructures.Keywords
This publication has 14 references indexed in Scilit:
- Improved Electron Mobility Higher than 106 cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBEJapanese Journal of Applied Physics, 1983
- Energy Structure and Quantized Hall Effect of Two-Dimensional HolesPhysical Review Letters, 1983
- Subband-Landau-Level Coupling in a Two-Dimensional Electron GasPhysical Review Letters, 1983
- Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunciton. II. Low Temperature MobilityJournal of the Physics Society Japan, 1982
- Electron transport in polar heterolayersSurface Science, 1982
- Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBEJapanese Journal of Applied Physics, 1981
- Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1−xAs/GaAs heterostructuresJournal of Applied Physics, 1981
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978
- Electron Mobility in High-Purity GaAsJournal of Applied Physics, 1970
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967