Decoration of buried surfaces in Si detected by positron annihilation spectroscopy
- 2 January 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (1) , 011920
- https://doi.org/10.1063/1.2162691
Abstract
The terminations of buried surfaces of two different cavity types (nano- and microcavities) produced in the same He + – H + co-implanted p -type Si (100) sample annealed at 900 ° C , are studied and characterized by positron annihilation spectroscopy. The characterization was carried out by means of three complementary positron techniques: Doppler broadening and coincidence-Doppler broadening spectroscopy with a continuous slow positron beam, and lifetime spectroscopy with a pulsed slow positron beam. It was found that the nanocavities have a pristine surface of Si, while the surfaces of the microcavities, formed below protruding blisters, are oxygen decorated. This case study opens the interesting use of the positronspectroscopy tool in the topical subject of empty space for microelectronics applications.Keywords
This publication has 23 references indexed in Scilit:
- Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal siliconApplied Physics Letters, 2004
- Porosity in low dielectric constant SiOCH films depth profiled by positron annihilation spectroscopyJournal of Applied Physics, 2004
- Silicon-on-Nothing MOSFETs: Performance, Short-Channel Effects, and Backgate CouplingIEEE Transactions on Electron Devices, 2004
- Gettering of Pd to implantation-induced nanocavities in SiApplied Physics Letters, 2003
- Polycrystalline silicon layer transfer by ion-cutApplied Physics Letters, 2003
- Positron Annihilation Techniques Suited for Porosity Characterization of Thin FilmsThe Journal of Physical Chemistry B, 2003
- Gettering of copper in silicon at half of the projected ion range induced by helium implantationJournal of Applied Physics, 2002
- Empty-space-in-silicon technique for fabricating a silicon-on-nothing structureApplied Physics Letters, 2000
- Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopyPhysical Review B, 2000
- Depth profiling of vacancy clusters in MeV-implanted Si using Au labelingApplied Physics Letters, 1998