Gettering of Pd to implantation-induced nanocavities in Si
- 4 August 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (5) , 946-947
- https://doi.org/10.1063/1.1597424
Abstract
The gettering of Pd to nanocavities in Si for implantation doses ranging from 5×10 13 to 1×10 15 cm −2 and annealing temperatures ranging from 750 to 1050 °C was investigated using Rutherford backscattering and cross-sectional transmission electron microscopy. For a given annealing temperature, the gettering efficiency increased as the dose decreased. For a given dose, maximum gettering efficiency was achieved at the intermediate temperatures studied. Competition between silicide formation and nanocavity gettering limited gettering efficiency.Keywords
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