Improvement of the photoelectric properties of amorphous SiCx:H by using disilylmethane as a feeding gas
- 24 April 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (17) , 1666-1668
- https://doi.org/10.1063/1.101412
Abstract
Amorphous (a‐) SiCx:H films were deposited in a rf glow discharge of disilylmethane/silane mixtures. At optical gaps larger than 2 eV these films are found to have a higher photoconductivity than films prepared in conventional CH4/SiH4 gas mixtures. Both types of films are compared with respect to their hydrogen content as well as infrared and effusion spectra.Keywords
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