Improvement of the photoelectric properties of amorphous SiCx:H by using disilylmethane as a feeding gas

Abstract
Amorphous (a‐) SiCx:H films were deposited in a rf glow discharge of disilylmethane/silane mixtures. At optical gaps larger than 2 eV these films are found to have a higher photoconductivity than films prepared in conventional CH4/SiH4 gas mixtures. Both types of films are compared with respect to their hydrogen content as well as infrared and effusion spectra.