Resonant tunneling diodes for multi-valued digital applications
- 17 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. ns 22, 188-195
- https://doi.org/10.1109/ismvl.1994.302201
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Differential multiple-valued logic using resonant tunneling diodesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A self-latching A/D converter using resonant tunneling diodesIEEE Journal of Solid-State Circuits, 1993
- Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applicationsIEEE Transactions on Electron Devices, 1993
- Dynamic hysteresis of the RTD folding circuit and its limitation on the A/D converterIEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, 1992
- Multivalued SRAM cell using resonant tunneling diodesIEEE Journal of Solid-State Circuits, 1992
- A new resonant-tunnel diode-based multivalued memory circuit using a MESFET depletion loadIEEE Journal of Solid-State Circuits, 1992
- A novel A/D converter using resonant tunneling diodesIEEE Journal of Solid-State Circuits, 1991
- Analysis of the hysteresis in the I-V characteristics of vertically integrated, multipeaked resonant-tunneling diodesJournal of Applied Physics, 1990
- Three and six logic states by the vertical integration of InAlAs/InGaAs resonant tunneling structuresJournal of Applied Physics, 1988
- Eleven-bit parity generator with a single, vertically integrated resonant tunnelling deviceElectronics Letters, 1988