Compressively strained 1.3 mu m InAsP/InP and GaInAsP/InP multiple quantum well lasers for high-speed parallel data transmission systems
- 1 June 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 29 (6) , 1536-1543
- https://doi.org/10.1109/3.234388
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- High-speed operation of strained InGaAs/InGaAsP MQW lasersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Carrier confinement and its effect on the internal quantum efficiency and modulation response of quantum well lasersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- High-Speed Dynamics in InP Based Multiple Quantum Well LasersJapanese Journal of Applied Physics, 1993
- Long wavelength high-speed semiconductor lasers with carrier transport effectsIEEE Journal of Quantum Electronics, 1992
- Strained-Layer Multi-Quantum Barriers for Reducing Hot Electron Leakage in Long-Wavelength Semiconductor LasersJapanese Journal of Applied Physics, 1992
- Investigations of laser array for parallel optical data link applicationsApplied Physics Letters, 1992
- Carrier recombination rates in strained-layer InGaAs-GaAs quantum wellsIEEE Journal of Quantum Electronics, 1991
- Timing jitter in semiconductor lasers under pseudorandom word modulationJournal of Lightwave Technology, 1989
- Electron reflectance of multiquantum barrier (MQB)Electronics Letters, 1986
- Band-structure engineering for low-threshold high-efficiency semiconductor lasersElectronics Letters, 1986