High-speed operation of strained InGaAs/InGaAsP MQW lasers
- 25 August 2005
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 170-171
- https://doi.org/10.1109/islc.1992.763623
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Effects of carrier transport on high-speed quantum well lasersApplied Physics Letters, 1991
- High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiersIEEE Journal of Quantum Electronics, 1991
- Carrier recombination rates in strained-layer InGaAs-GaAs quantum wellsIEEE Journal of Quantum Electronics, 1991
- High-efficiency InGaAsP/InP flat-surface buried heterostructure distributed feedback lasers at 1.55 μmJournal of Applied Physics, 1987
- High-speed digital modulation of ultralow threshold (w i t h o u t biasApplied Physics Letters, 1987