Growth of Amorphous SiN Films by Chemical Vapor Deposition Using Monomethylamine
- 1 August 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (8R)
- https://doi.org/10.1143/jjap.28.1527
Abstract
Chemical vapor deposition of silicon nitride film has been studied by using SiH4 and NH2CH3 as source gases for the deposition temperature region of 700∼900°C. The deposition rate was somewhat larger than that of the case using SiH4 and NH3 gases. The film deposited at 900°C had a particularly smooth specular surface.Keywords
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