A Single-ended 79 GHz Radar Receiver in SiGe Technology
- 1 September 2007
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Abstract
For the first time a single-ended 79 GHz receiver in SiGe technology is reported in this paper for automotive radar application. The receiver consists of a single-ended cascode LNA, a single-ended RF double-balanced down-conversion micromixer, and a Colpitts VCO. The LNA and mixer present 21.7 dB and 7 dB gain at 79 GHz respectively, and VCO oscillates from 79 to 82 GHz. The measurement for the whole receiver at 79 GHz shows 20-26 dB gain in the linear region with stable IF output signal. The input P1dB of the receiver is -35 dBm.Keywords
This publication has 8 references indexed in Scilit:
- A 77 GHz (W-band) SiGe LNA with a 6.2 dB Noise Figure and Gain Adjustable to 33 dBPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- 77 GHz Automotive Radar Receiver Front-end in SiGe:C BiCMOS TechnologyESSCIRC 2007 - 33rd European Solid-State Circuits Conference, 2006
- An Improved Highly-Linear Low-Power Down-Conversion Micromixer for 77 GHz Automotive Radar in SiGe TechnologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- A 60-GHz superheterodyne downconversion mixer in silicon-germanium bipolar technologyIEEE Journal of Solid-State Circuits, 2004
- A low-noise, and high-gain double-balanced mixer for 77 GHz automotive radar front-ends in SiGe bipolar technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- Eight-Channel 77-GHz Front-End Module With High-Performance Synthesized Signal Generator for FM-CW Sensor ApplicationsIEEE Transactions on Microwave Theory and Techniques, 2004
- Novel collector design for high-speed SiGe:C HBTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technologyIEEE Journal of Solid-State Circuits, 2003