Drain-avalanche induced hole injection and generation of interface traps in thin oxide MOS devices
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Drain-avalanche-induced hot hole injection in thin oxide MOS devices, used in flash-type EEPROM memory cells, is discussed. A significant amount of acceptor-like interface traps are generated by the injected hot holes, spreading into the channel region. These generated interface traps dramatically alter the channel hot carrier characteristics of the device. This can adversely affect the programmability of a flash memory cell and can cause early window closure.> Author(s) Rakkhit, R. Adv. Micro Devices, Sunnyvale, CA, USA Haddad, S. ; Chi Chang ; Yue, J.Keywords
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