A 128 K flash EEPROM using double-polysilicon technology
- 1 October 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 22 (5) , 676-683
- https://doi.org/10.1109/jssc.1987.1052799
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- A 120ns 4Mb CMOS EPROMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Comparison and trends in today's dominant E2technologiesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- A new flash E2PROM cell using triple polysilicon technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- An electrically alterable nonvolatile memory cell using a floating-gate structureIEEE Journal of Solid-State Circuits, 1979