A New method for Investigating the Electric Field Regions of p‐n Junctions
- 1 January 1969
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 34 (2) , K83-K86
- https://doi.org/10.1002/pssb.19690340246
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- The direct observation of electrical leakage paths due to crystal defects by use of the scanning electron microscopeSolid-State Electronics, 1966
- Simultaneous Observation of Diffusion-Induced Dislocation Slip Patterns in Si With Electron Beam Scanning and Optical MeansJournal of Applied Physics, 1964
- Evaluation of Passivated Integrated Circuits Using the Scanning Electron MicroscopeJournal of the Electrochemical Society, 1964
- MICROSCOPY OF INTERNAL CRYSTAL IMPERFECTIONS IN Si p-n JUNCTION DIODES BY USE OF ELECTRON BEAMSApplied Physics Letters, 1963