Determination of band offsets using the photovoltaic effect: Application to the PbS/PbSe heterostructure
- 16 February 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (7) , 419-421
- https://doi.org/10.1063/1.98161
Abstract
The energy‐band offsets at a semiconductor heterointerface can be determined by measuring the temperature and wavelength dependence of the photovoltaic response. Results for the PbS/PbSe structure show a type I band alignment with a conduction‐band offset ΔEc of ∼48 meV. The method is sensitive to small band offsets and can be applied to the study of other semiconductor systems, especially narrow band‐gap materials.Keywords
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