Time delays in lead-salt semiconductor diode lasers
- 1 March 1984
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 33 (3) , 181-182
- https://doi.org/10.1007/bf00618753
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Hot-wall epitaxial growth of Pb1−xSnxTe hetero-layers for infrared diode laser devicesInfrared Physics, 1982
- PbSnSeTe–PbSeTe Lattice-Matched Double-Heterostructure LasersJapanese Journal of Applied Physics, 1982
- Near-field emission of lead-sulfide-selenide homojunction lasersIEEE Journal of Quantum Electronics, 1980
- Measurement of interface recombination velocity in (Pb,Sn)Te/PbTe double-heterostructure laser diodesApplied Physics Letters, 1979
- Life time measurements in PbTe and PbSnTeSolid-State Electronics, 1978
- Auger recombination in PbTeJournal of Applied Physics, 1977
- Measurement of minority carrier lifetime during gradual degradation of GaAs-Ga1-xAlxAs double- heterostructure lasersIEEE Journal of Quantum Electronics, 1974
- Single Crystal Photoconductive Detectors in Lead SelenideJournal of the Electrochemical Society, 1961