Effect of seed layer on the magnetoresistance characteristics in a-CoNbZr-based spin valves
- 1 July 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 34 (4) , 1414-1416
- https://doi.org/10.1109/20.706566
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Interfacial Uncompensated Antiferromagnetic Spins: Role in Unidirectional Anisotropy in PolycrystallineBilayersPhysical Review Letters, 1997
- Factors affecting performance of NiO biased giant magnetoresistance structuresJournal of Applied Physics, 1996
- Quarternary giant magnetoresistance random access memoryJournal of Applied Physics, 1996
- Temperature dependence of the pinning field and coercivity of NiFe layers coupled with an antiferromagnetic FeMn layerJournal of Applied Physics, 1996
- Magnetoresistance values exceeding 21% in symmetric spin valvesJournal of Applied Physics, 1995
- Magnetoresistance of symmetric spin valve structuresIEEE Transactions on Magnetics, 1994
- Dramatic enhancement of interlayer exchange coupling and giant magnetoresistance in Ni81Fe19/Cu multilayers by addition of thin Co interface layersApplied Physics Letters, 1992
- Magnetoresistive memory technologyThin Solid Films, 1992
- Giant magnetoresistive in soft ferromagnetic multilayersPhysical Review B, 1991
- Properties of amorphous alloy films mainly composed of Co--NbIEEE Transactions on Magnetics, 1983