InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si
- 1 December 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (12S) , 3815-3817
- https://doi.org/10.1143/jjap.30.3815
Abstract
The first InP/InGaAs double heterojunction bipolar transistors on Si substrates were grown by metalorganic chemical vapor deposition. The transistor with an InP buffer layer thickness of 4 µm exhibited high current gains of more than 250 and an ideality factor of 1.3. (The base doping concentration and its thickness were 1.5×1019 cm-3 and 700 Å, respectively.) The characteristics of the DHBT on Si with the 4-µm buffer layer are comparable to those of transistors on InP substrates.Keywords
This publication has 17 references indexed in Scilit:
- High-speed InP/GaInAs heterojunction phototransistor on InP-on-Si grown by organometallic vapor phase epitaxyApplied Physics Letters, 1991
- Improvement of InP Crystal Quality on GaAs Substrates by Thermal Cyclic AnnealingJapanese Journal of Applied Physics, 1989
- First room-temperature cw operation of a GaInAsP/InP light-emitting diode on a silicon substrateApplied Physics Letters, 1988
- A Study of Heteroepitaxy of InP on GaAs by Metalorganic Vapor‐Phase EpitaxyJournal of the Electrochemical Society, 1988
- Hetero-epitaxial growth of InP on Si substrates by LP-MOVPEJournal of Crystal Growth, 1988
- MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate LayerJapanese Journal of Applied Physics, 1987
- Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) siliconElectronics Letters, 1984
- Growth of GaAs on Si by MOVCDJournal of Crystal Growth, 1984
- Reliability of high radiance InGaAsP/InP LED́s operating in the 1.2-1.3 µm wavelengthIEEE Journal of Quantum Electronics, 1981