Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE
- 1 May 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (5A) , L579-581
- https://doi.org/10.1143/jjap.26.l579
Abstract
The absorption spectrum induced by applying an electric field was measured for GaInAsP/InP MQW structures with the corresponding bandgap wavelength λg∼1.3 µm. A 25-pairs MQW wafer was grown by LPE technique with a well width L z=150 Å, and a barrier width L b=200 Å. The maximum electro-absorption in this waveguide structure was observed to be 550 cm-1 at an applied voltage of 25 V. From this value, the refractive index variation in the quantum well layer was estimated as 0.27%.Keywords
This publication has 9 references indexed in Scilit:
- InGaAsP/InP optical switches using carrier induced refractive index changeApplied Physics Letters, 1987
- High-speed electroabsorption modulator with strip-loaded GaInAsP planar waveguideJournal of Lightwave Technology, 1986
- Microlens for coupling a semiconductor laser to a single-mode fiberOptics Letters, 1986
- Electroreflectance Spectra and Field-Induced Variation in Refractive Index of a GaAs/AlAs Quantum Well Structure at Room TemperatureJapanese Journal of Applied Physics, 1986
- 1.6 GHz electroabsorption light modulation in InGaAsP/InP double heterostructures with strip-loaded planar waveguideElectronics Letters, 1985
- High-speed long-wavelength optical modulation in InGaAs/InAlAs multiple quantum wellsElectronics Letters, 1985
- Electric-field-induced refractive index variation in quantum-well structureElectronics Letters, 1985
- High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structureApplied Physics Letters, 1984
- Refractive index of GaAs-AlAs superlattice grown by MBEJournal of Electronic Materials, 1983