Electroreflectance Spectra and Field-Induced Variation in Refractive Index of a GaAs/AlAs Quantum Well Structure at Room Temperature
- 1 August 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (8A) , L640
- https://doi.org/10.1143/jjap.25.l640
Abstract
Observed electroreflectance spectra for a GaAs/AlAs quantum well structure show very clear exciton-induced features at room temperature. A maximum rate for the field-induced modulation of refractive index, Δn/n/E in each quantum well is deduced to be 4%/105 V/cm at a photon energy close to the excitonic gap. Such a large variation in the refractiveindex is attributed to excitonic transitions.Keywords
This publication has 13 references indexed in Scilit:
- Quadratic electro-optic light modulation in a GaAs/AlGaAs multiquantum well heterostructure near the excitonic gapApplied Physics Letters, 1986
- Electric field dependence of optical absorption near the band gap of quantum-well structuresPhysical Review B, 1985
- Electric-field-induced refractive index variation in quantum-well structureElectronics Letters, 1985
- Electric-field-induced dissociation of excitons in semiconductor quantum wellsPhysical Review B, 1985
- Measurements of electric-field-induced energy-level shifts in GaAs single-quantum-wells using electroreflectanceSolid State Communications, 1985
- Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark EffectPhysical Review Letters, 1984
- Energy-gap discontinuities and effective masses for quantum wellsPhysical Review B, 1984
- Comment on Polarization Dependent Momentum Matrix Elements in Quantum Well LasersJapanese Journal of Applied Physics, 1984
- Quantum Mechanical Size Effect Modulation Light Sources– A New Field Effect Semiconductor Laser or Light Emitting DeviceJapanese Journal of Applied Physics, 1983
- Effect of an electric field on the luminescence of GaAs quantum wellsPhysical Review B, 1982