Tantalum pentoxide for advanced DRAM applications
- 1 December 1996
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 290-291, 440-446
- https://doi.org/10.1016/s0040-6090(96)08975-4
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Deposition, annealing and characterisation of high‐dielectric‐constant metal oxide filmsAdvanced Materials for Optics and Electronics, 1995
- Low‐Pressure chemical vapour deposition of tantalum pentoxide films for ulsi devices using tantalum pentaethoxide as precursorAdvanced Materials for Optics and Electronics, 1992
- UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMsIEEE Transactions on Electron Devices, 1991
- Conduction Mechanism of Leakage Current in Ta2 O 5 Films on Si Prepared by LPCVDJournal of the Electrochemical Society, 1990
- Preparation and Properties of Ta2 O 5 Films by LPCVD for ULSI ApplicationJournal of the Electrochemical Society, 1990
- High-performance tantalum oxide capacitors fabricated by a novel reoxidation schemeIEEE Transactions on Electron Devices, 1990
- Oxidized Ta/sub 2/O/sub 5//Si/sub 3/N/sub 4/ dielectric films on poly-crystalline Si for dRAMsIEEE Transactions on Electron Devices, 1989
- Leakage-current reduction in thin Ta/sub 2/O/sub 5/ films for high-density VLSI memoriesIEEE Transactions on Electron Devices, 1989
- Photo-Process of Tantalum Oxide Films and Their CharacteristicsJapanese Journal of Applied Physics, 1988
- Quadruply self-aligned stacked high-capacitance RAM using Ta2O5high-density VLSI dynamic memoryIEEE Transactions on Electron Devices, 1982