Piezoelectric-field-induced localization of barrier states in {211}-oriented InAs/GaAs superlattices
- 15 May 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 47 (19) , 12945-12948
- https://doi.org/10.1103/physrevb.47.12945
Abstract
We observe localized states whose energy is resonant with the continuum in GaAs with periodically inserted {211}-InAs sheets. Evidence for these states comprises excitonic interband transitions above the gap of GaAs, observed by piezoreflectance and photoluminescence-excitation spectroscopies. This localization has its origin in the strain-induced electric field existing in the InAs layers, which we show by simulations of the dielectric function based on envelope-function-type calculations.Keywords
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