Adsorption of atomic nitrogen at GaAs(110) surfaces
- 1 January 1990
- Vol. 41 (1-3) , 669-671
- https://doi.org/10.1016/s0042-207x(05)80157-5
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Photoemission studies of the reactions of ammonia and N atoms with Si(100)-(2×1) and Si(111)-(7×7) surfacesPhysical Review B, 1988
- Cleaning and nitridation of GaAs surfaces in multipolar plasmas investigated by i n s i t u photoemission and spectroscopic ellipsometryJournal of Vacuum Science & Technology B, 1987
- Photoemission study of the passivation of GaAs in a nitrogen multipolar plasmaPhilosophical Magazine Part B, 1987
- Core level photoemission study of the interaction of plasmas with real GaAs(100) surfacesSurface Science, 1985
- Photoemission studies of molecular beam epitaxially grown GaAs (001) surfaces exposed to a nitrogen plasmaJournal of Applied Physics, 1983
- Interactions between H2 and N2 plasmas and a GaAs(100) surface: Chemical and electronic propertiesApplied Physics Letters, 1983
- Low-energy electron energy-loss spectroscopy with Ge:GaAs (110) heterostructuresSolid State Communications, 1982
- 10-30-eV optical properties of GaNPhysical Review B, 1981
- Electron escape depths in germaniumSurface Science, 1981
- Interaction of Ga and As2 Molecular Beams with GaAs SurfacesJournal of Applied Physics, 1968