Far-infrared study of free carriers and the plasmon-phonon interaction in CdTe
- 15 January 1974
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 9 (2) , 545-550
- https://doi.org/10.1103/physrevb.9.545
Abstract
The reflectivity of has been measured between 16 and 203 at room temperature. The single-crystal samples had carrier concentrations between 5 × and 1 × . The data could be fitted by using classical lattice theory and Drude-type free-carrier theory with an energy-independent scattering time. The values of and mobility obtained from the fits agreed reasonably well with Hall and resistivity values. The agreement was not improved by the introduction of an energy-dependent scattering time for either polar-mode or ionized-impurity scattering. The plasmon-phonon minima were observed and their frequencies were found to be strongly influenced by as well as by . The optical lattice parameters were determined as follows: , , , and . These results agree well with previous measurements.
Keywords
This publication has 12 references indexed in Scilit:
- Far infrared absorption in ZnOSolid State Communications, 1971
- Far infrared free-carrier absorption in n-type gallium arsenideJournal of Physics and Chemistry of Solids, 1971
- Electron Mobility in II-VI SemiconductorsPhysical Review B, 1970
- Far Infrared Measurement of the Dielectric Properties of GaAs and CdTe at 300 K and 8 KApplied Optics, 1969
- Far Infrared Optical Properties of Pressed CdTeApplied Optics, 1968
- Far-Infrared Spectrum of Cadmium TellurideJournal of the Optical Society of America, 1967
- Infrared Absorption Spectrum of CdTeThe Journal of Chemical Physics, 1967
- Measurement of the Conductivity Effective Mass in Semiconductors Using Infrared ReflectionPhysical Review B, 1964
- Effective Electron Mass in CdTePhysical Review B, 1963
- The Optical Properties of Cadmium Telluride in the Far Infrared RegionJournal of the Physics Society Japan, 1961