Application of reactive ion etching using C/sub 2/H/sub 6//H/sub 2/O/sub 2/ to fabricate a 1.48 μm lnGaAsP/InP p-substrate buried-heterostructure laser diode
- 25 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Reactive ion etching using C/sub 2/H/sub 6//H/sub 2//O/sub 2/ realized sufficiently smooth etched surface and little side-etching for the fabrication of ridge mesa structures of the commercially produced PPlBH laser diodes. No degradation of the laser characteristics was observed.Keywords
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