Chemical Beam Epitaxy

Publisher Website

1 January 1989

book chapter
Published by Elsevier

p. 255-357
https://doi.org/10.1016/b978-0-12-234121-2.50011-5

Abstract

No abstract available

This publication has 100 references indexed in Scilit:

Desorption phenomena
Published by Springer Nature ,2005
InP/In_0.53Ga_0.47As heterojunction phototransistors grown by chemical beam epitaxy
IEEE Electron Device Letters, 1987
High current gain heterojunction bipolar phototransistor for monolithic integrated photoreceiver
Solid-State Electronics, 1987
Spectroscopy of excited states in ${In}_{0.53}$ ${Ga}_{0.47}$ As-InP single quantum wells grown by chemical-beam epitaxy
Physical Review B, 1986
Room-Temperature Optical Nonlinearities in GaAs
Physical Review Letters, 1986
Epitaxie par jets moléculaires de In0,53Ga0,47As et de InP sur substrats de InP
Revue de Physique Appliquée, 1983
A PH3 cracking furnace for molecular beam epitaxy
Journal of Vacuum Science & Technology A, 1983
Drift-diffusion theory of symmetrical double-junction diodes
Solid-State Electronics, 1982
Diffused epitaxial GaAlAs-GaAs heterojunction bipolar transistor for high-frequency operation
Applied Physics Letters, 1982
Improved mobility in OM-VPE-grown Ga _{1−
x} In _x As
Electronics Letters, 1981