Schottky barrier restricted arrays of phase-coupled AlGaAs quantum well lasers

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Abstract
Simple, self-aligned phase-coupled laser arrays consisting of ten 3-μm-wide stripes are described. The current flow was confined to the stripes by a Schottky barrier over the remainder of the laser chip. This process, applied to the AlGaAs graded-index structures grown by metalorganic vapor phase epitaxy, produced arrays with threshold currents as low as 20 mA/stripe. The devices are capable of output powers of up to 1 W/facet and operate at temperatures as high as 100 °C with a stable far-field pattern. In addition, novel information on the phase coupling in these gain-guided arrays has been obtained.