On the impedance associate with electron-hole recombination in the space charge layer of an illuminated semiconductor/electrolyte interface
- 1 February 1988
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 3 (2) , 124-133
- https://doi.org/10.1088/0268-1242/3/2/009
Abstract
The impedance associated with recombination of free electrons and free holes in the space charge layer has been calculated. It has been shown that this impedance corresponds to a parallel-equivalent circuit of a capacitance and a resistance in parallel with the space charge layer capacitance. It has been calculated that the recombination capacitance has almost the same voltage dependence as the space charge layer capacitance, and that the recombination resistance is inversely proportional to the recombination rate in the space charge layer. The impedance associated with recombination in the space charge layer has been compared with the surface recombination impedance and with experimental results obtained at illuminated GaAs electrodes.Keywords
This publication has 16 references indexed in Scilit:
- An analytical formulation for the J(V) characteristics of a photoelectrolytical cellSolar Energy, 1986
- Calculation of the electrical impedance associated with the surface recombination of free carriers at an illuminated semiconductor/electrolyte interfaceJournal of Physics D: Applied Physics, 1986
- Analysis of Trapping and Recombination Effects in Photoelectrochemical Processes at Semiconductor Electrodes: Investigations at n‐GaAsBerichte der Bunsengesellschaft für physikalische Chemie, 1985
- The Minority Carrier Recombination Resistance: A Useful Concept in Semiconductor ElectrochemistryJournal of the Electrochemical Society, 1985
- Band‐Edge Shift and Surface Charges at Illuminated n ‐ GaAs / Aqueous Electrolyte Junctions: Surface‐State Analysis and Simulation of Their Occupation RateJournal of the Electrochemical Society, 1985
- The Transport and Kinetics of Minority Carriers in Illuminated Semiconductor ElectrodesJournal of the Electrochemical Society, 1981
- The current-voltage characteristics of semiconductor-electrolyte junction photovoltaic cellsApplied Physics Letters, 1980
- The equivalent circuit model in solid-state electronics—IIISolid-State Electronics, 1970
- Quantitative analysis of the effects of steady-state illumination on the MOS-capacitor—I: TheorySolid-State Electronics, 1970
- The equivalent circuit model in solid-state electronics—Part I: The single energy level defect centersProceedings of the IEEE, 1967