Neutron Irradiation as a Means of Reducing the Incidence of Radiation Induced Breakdown in a Radiation Hard Power MOSFET
- 1 January 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 32 (6) , 3961-3964
- https://doi.org/10.1109/tns.1985.4334050
Abstract
The problem of transient gamma induced "second breakdown" in a specially developed radiation hard power MOSFET is discussed, and results of experiments in which neutron irradiation was used to control minority carrier lifetime are presented. The technique is only partially successful at reducing susceptibility to second breakdown.Keywords
This publication has 5 references indexed in Scilit:
- An Investigation into Radiation Induced Second Breakdown in N Channel Power MOSFETsIEEE Transactions on Nuclear Science, 1984
- Devlopement of a Radiation Hard N-Channel Power MOSFETIEEE Transactions on Nuclear Science, 1983
- VDMOS Power Transistor Drain-Source Resistance Radiation DependenceIEEE Transactions on Nuclear Science, 1981
- Characterization and Analysis of a Power Transistor for Reverse Second Breakdown When Subjected to Neutron FluenceIEEE Transactions on Nuclear Science, 1981
- Neutron Irradiation for Prevention of Latch-Up in MOS Integrated CircuitsIEEE Transactions on Nuclear Science, 1979