Thermodynamic analysis of the MOVPE growth of quaternary III–V alloy semiconductors
- 1 August 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 76 (2) , 233-242
- https://doi.org/10.1016/0022-0248(86)90366-0
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Thermodynamic analysis of the MOVPE growth processJournal of Crystal Growth, 1986
- Thermodynamic analysis of metalorganic vapor phase epitaxy of III–V alloy semiconductorsJournal of Crystal Growth, 1986
- Thermodynamic aspects of OMVPEJournal of Crystal Growth, 1984
- A critical appraisal of growth mechanisms in MOVPEJournal of Crystal Growth, 1984
- OMVPE growth of GaAs1-xSbx: solid compositionJournal of Crystal Growth, 1983
- Thermodynamic aspects of organometallic vapor phase epitaxyJournal of Crystal Growth, 1983
- On the Reaction Mechanism of GaAs MOCVDJournal of the Electrochemical Society, 1983
- A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxyJournal of Crystal Growth, 1981
- Thermodynamic analysis for InGaAsP epitaxial growth by the chloride-CVD processJournal of Crystal Growth, 1980
- Calculation of ternary and quaternary III–V phase diagramsJournal of Crystal Growth, 1974