Utilization of Non-Pseudomorphic Growth to Realize Tensile Strain on GaAs Substrates
- 1 November 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (11A) , L1596
- https://doi.org/10.1143/jjap.32.l1596
Abstract
A novel structure consisting of a thick non-pseudomorphic InAlAs grid layer and InGaAs-GaAs strained-layer superlattice dislocation filter is proposed for realizing tensile strain on GaAs substrates. The structure is examined and characterized by photoluminescence, Nomarski etch-pit microscopy and double crystal X-ray diffraction and found to be effective in the incorporation of tensile strain in devices grown on the GaAs substrate.Keywords
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