Epitaxial Growth of B-Doped SiGe Films Using Si-GeH4-B2H6 MBE
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- SiGe-base heterojunction bipolar transistors: physics and design issuesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Heterojunction bipolar transistor fabrication using Si1−xGex selective epitaxial growth by gas source silicon molecular beam epitaxyApplied Physics Letters, 1990
- 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistorsIEEE Electron Device Letters, 1990
- Low‐Temperature Growth of β ‐ SiC on Si by Gas‐Source MBEJournal of the Electrochemical Society, 1990
- Small-geometry, high-performance, Si-Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistorsIEEE Electron Device Letters, 1989
- Preparation and characterization of SiNx films epitaxially grown on Si(111) substratesJournal of Crystal Growth, 1989
- Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxyApplied Physics Letters, 1988
- Oxygen-Doped Si Epitaxial Film (OXSEF)Japanese Journal of Applied Physics, 1987
- Production silicon molecular beam epitaxy apparatus for 4-in.-diam wafersJournal of Vacuum Science & Technology B, 1985
- MBE growth and characterization of single crystal silicon oxides on (111) and (100)siliconJournal of Vacuum Science & Technology B, 1983