Preparation and characterization of SiNx films epitaxially grown on Si(111) substrates
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 464-467
- https://doi.org/10.1016/0022-0248(89)90443-0
Abstract
No abstract availableKeywords
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