Nitrogen bonding changes versus substrate temperature evidenced by X.P.S. in SiNxHy alloys prepared with NH3
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 77-78, 945-948
- https://doi.org/10.1016/0022-3093(85)90817-8
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Two-Phase Structure of a-Si1-xNx:H Fabricated by Microwave Glow-Discharge TechniqueJapanese Journal of Applied Physics, 1985
- Properties of amorphous semiconducting multilayer films and of alloysPhysical Review B, 1984
- Electronic structure of hydrogenated and unhydrogenated amorphous: A photoemission studyPhysical Review B, 1984
- Thermal nitridation of silicon: An XPS and LEED investigationJournal of Vacuum Science & Technology B, 1984
- Evaporated a-Si films with low ESR defect density by hydrogenation under NH3 ambientSolid State Communications, 1983
- Adsorption and decomposition of ammonia on W(100); XPS and UPS studiesSurface Science, 1983
- Low Temperature Deposition of Silicon Nitride by Reactive Ion‐Beam SputteringJournal of the Electrochemical Society, 1983
- Wide Optical-Gap, Photoconductive a-SixN1-x:HJapanese Journal of Applied Physics, 1981
- Surface Oxidation of Silicon Nitride FilmsJournal of the Electrochemical Society, 1976
- Preparation of Si3N4 coatings by ion platingJournal of Vacuum Science and Technology, 1975