Evaporated a-Si films with low ESR defect density by hydrogenation under NH3 ambient
- 1 October 1983
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 48 (1) , 61-64
- https://doi.org/10.1016/0038-1098(83)90184-9
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- XPS, ESR and resistivity measurements on amorphous silicon oxynitride films (a-SiOxNy) prepared by reactive evaporation of Si in presence of NO2Journal of Non-Crystalline Solids, 1983
- A new evaporation method for preparing hydrogenated amorphous silicon filmsSolid State Communications, 1982
- An alternative method of preparing hydrogen-doped evaporated amorphous silicon preliminary reportPhilosophical Magazine Part B, 1981
- Hydrogenated amorphous-silicon thin films produced by ion platingApplied Physics Letters, 1980
- Comparison of dc and hf plasma treatments for hydrogenation of amorphous siliconRevue de Physique Appliquée, 1980
- The effect of oxygen on the properties of evaporated amorphous siliconPhysica Status Solidi (b), 1979
- Some properties of evaporated amorphous silicon made with atomic hydrogenJournal of Applied Physics, 1978
- Electron spin resonance of ultrahigh vacuum evaporated amorphous silicon:In situandex situstudiesPhysical Review B, 1978
- Hydrogenation of evaporated amorphous silicon films by plasma treatmentApplied Physics Letters, 1978
- Structural, Optical, and Electrical Properties of Amorphous Silicon FilmsPhysical Review B, 1970