Energy influx from an rf plasma to a substrate during plasma processing
- 15 April 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (8) , 3637-3645
- https://doi.org/10.1063/1.372393
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- On the energy influx to the substrate during sputter deposition of thin aluminium filmsThin Solid Films, 1998
- Surface temperature and thermal balance of probes immersed in high density plasmaPlasma Sources Science and Technology, 1998
- Kinetic processes in metal epitaxy studied with variable temperature STM: Ag/Pt(111)Thin Solid Films, 1995
- Effects of substrate temperature and angular position on the properties of ion beam sputter deposited Fe films on (100) GaAs substratesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Energy deposition and substrate heating during magnetron sputteringVacuum, 1993
- Basic Mechanisms in Plasma EtchingContributions to Plasma Physics, 1989
- On the Temperature Dependence of Plasma PolymerizationContributions to Plasma Physics, 1988
- An intrinsic stress scaling law for polycrystalline thin films prepared by ion beam sputteringJournal of Applied Physics, 1987
- Modelling ion-assisted deposition of CeO2 filmsApplied Physics A, 1986
- Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatingsJournal of Vacuum Science and Technology, 1974