Gallium nitride (GaN) HEMT's: progress and potential for commercial applications

25 June 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 243-246
https://doi.org/10.1109/gaas.2002.1049069

Abstract

This paper focuses on the development of 100 mm gallium nitride HEMT technology at RF Micro Devices and the utilization of GaN transistors for commercial applications such as power amplifiers, power switches and low-noise power oscillators.

Keywords

GALLIUM NITRIDE
III-V SEMICONDUCTOR MATERIALS
HEMTS
SUBSTRATES
SILICON CARBIDE
RADIO FREQUENCY
FABRICATION
CONDUCTIVITY
ALUMINUM GALLIUM NITRIDE
LOW-NOISE AMPLIFIERS

This publication has 3 references indexed in Scilit:

AlGaN/GaN HEMTs on (111) silicon substrates
IEEE Electron Device Letters, 2002
Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates
IEEE Transactions on Electron Devices, 2001
AlGaN/GaN heterostructures on insulating AlGaN nucleation layers
Applied Physics Letters, 1999