Ballistic-electron-emission microscopy investigation of Schottky barrier interface formation
- 21 August 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (8) , 780-782
- https://doi.org/10.1063/1.101778
Abstract
Ballistic‐electron emission microscopy (BEEM) has been used to investigate the origin of defects at the Au/GaAs(100) Schottky barrier interface. In addition, molecular beam epitaxy (MBE) and in situ fabrication methods have been employed to control Schottky barrier interface properties. BEEM characterization combined with MBE methods has enabled the development of a near‐ideal Schottky barrier interface with drastically reduced defect density.Keywords
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