Effect of composition and annealing conditions on the electrical properties of Pb(ZrxTi1−x)O3 thin films deposited by the sol-gel process
- 1 November 1994
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 252 (1) , 38-43
- https://doi.org/10.1016/0040-6090(94)90822-2
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Effect of electrodes on the ferroelectric properties of pulsed-laser ablation-deposited PbZrXTi1-xO3thin film capacitorsFerroelectrics, 1994
- Fatigue of ferroelectric PbZrxTiyO3 capacitors with Ru and RuOx electrodesJournal of Materials Research, 1993
- Fatigue and retention in ferroelectric Y-Ba-Cu-O/Pb-Zr-Ti-O/Y-Ba-Cu-O heterostructuresApplied Physics Letters, 1992
- Processing and electrical properties of Pb (ZrxTi1−x)O3 (x=0.2–0.75) films: Comparison of metallo-organic decomposition and sol-gel processesJournal of Applied Physics, 1992
- Progress in ferroelectric memory technologyIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 1991
- Preparation and electrical properties of MOCVD-deposited PZT thin filmsJournal of Applied Physics, 1991
- Ferroelectric thin films for electronic applicationsJournal of Vacuum Science & Technology A, 1991
- Preparation of PbZrO3–PbTiO3 Ferroelectric Thin Films by the Sol–Gel ProcessJournal of the American Ceramic Society, 1991
- Ferroelectric MemoriesScience, 1989
- Properties of D.C. magnetron-sputtered lead zirconate titanate thin filmsThin Solid Films, 1989