GaN based transistors for high temperature applications
- 1 April 1997
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 46 (1-3) , 69-73
- https://doi.org/10.1016/s0921-5107(96)01935-6
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaNJournal of Electronic Materials, 1996
- Short-channel GaN/AlGaN doped channel heterostructurefieldeffect transistors with 36.1 cutoff frequencyElectronics Letters, 1996
- Ion implantation doping and isolation of GaNApplied Physics Letters, 1995
- Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °CApplied Physics Letters, 1995
- Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistorApplied Physics Letters, 1994
- Microwave performance of GaN MESFETsElectronics Letters, 1994
- Monte Carlo simulation of electron transport in gallium nitrideJournal of Applied Physics, 1993
- Metal contacts to gallium nitrideApplied Physics Letters, 1993
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Monte Carlo calculation of the velocity-field relationship for gallium nitrideApplied Physics Letters, 1975