High performance monolithically integrated InP photoreceivers
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Monolithically integrated photoreceivers, which combine InGaAs photodetectors with field-effect- or heterojunction bipolar-transistor preamplifiers on InP substrates achieve high speed and high sensitivities up to the 1 to 10 Gb/s range. They are rapidly becoming the receivers of choice for high performance fiber optical communication at gigabit-rates in the 1.3 to 1.6 micrometer wavelengths range.Keywords
This publication has 17 references indexed in Scilit:
- 10 GHz bandwidth monolithic p-i-n modulation-doped field effect transistor photoreceiverApplied Physics Letters, 1993
- Design considerations for wide-band p-i-n/HBT monolithic transimpedance optical receiversJournal of Lightwave Technology, 1993
- A high-speed eight-channel optoelectronic integrated receiver array comprising GaInAs p-i-n PD's and AlInAs/GaInAs HEMTsJournal of Lightwave Technology, 1992
- 10-Gb/s high-speed monolithically integrated photoreceiver using InGaAs p-i-n PD and planar doped InAlAs/InGaAs HEMTsIEEE Photonics Technology Letters, 1992
- Monolithic eight-channel photoreceiver array OEICs for HDWDM applications at 1.55 μmElectronics Letters, 1992
- Monolithically integrated four-channel receiver array using diffused InGaAs JFET technologyElectronics Letters, 1991
- A 622 Mb/s high-sensitivity monolithic InGaAs-InP pin-FET receiver OEIC employing a cascode preamplifierIEEE Photonics Technology Letters, 1991
- Monolithically integrated MSM-transimpedance amplifier grown by MBE for 1.0-1.6 mu m operationIEEE Journal of Quantum Electronics, 1991
- Monolithically integrated waveguide-MSM detector-HEMT amplifier receiver for long-waveguide lightwave systemsIEEE Photonics Technology Letters, 1991
- A 3 GHz transimpedance OEIC receiver for 1.3-1.55 mu m fiber-optic systemsIEEE Photonics Technology Letters, 1990