Hot electron injection in InAlGaAs/InGaAs ballistic collection transistors
- 1 March 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (3B) , B527-B529
- https://doi.org/10.1088/0268-1242/7/3b/137
Abstract
Hot electron transport in InAlGaAs/InGaAs ballistic collection transistors (BCTs) is simulated using a self-consistent Monte Carlo method. The authors analyse the effects of hot electron injection on the device performance of BCTs with various injection energies. The simulation has shown that the base and collector transit times in BCTs have conspicuous dependences on the energy of hot electrons in the base region.Keywords
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